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  july 2010 doc id 17416 rev 1 1/8 8 BYV54HR aerospace 40 a - 200 v fa st recovery rectifier features very small conduction losses negligible switching losses high surge current capability high avalanche energy capability hermetic package target radiation qualification: ? 150 krad (si) low dose rate ? 1 mrad high dose rate package mass: 10 g escc qualified description packaged in a hermetic to-254aa, this device is intended for use in medium voltage, high frequency switching mode power supplies, high frequency dc to dc converters, and other aerospace applications. the complete escc specification for this device is available from the european space agency web site. st guarantees full compliance of qualified parts with such escc de tailed specifications. figure 1. device configuration to-254aa 2 3 1 byv54s200fsy1 hrb byv54s200fsy terminal 1: terminal 2: terminal 3: the case is not connected to any lead cathode anode anode table 1. device summary (1) 1. contact st sales office for information about the specif ic conditions for products in die form and qml-q versions. order code escc detailed specification quality level lead finish eppl i f(av) v rrm t j(max) v f (max) byv54s200fsy1 - engineering model gold - 40 a 200 v 150 c 1.10 v byv54s200fsyhrb 5103/031/05 flight part solder dip y www.st.com
characteristics BYV54HR 2/8 doc id 17416 rev 1 1 characteristics table 2. absolute maximum ratings symbol characteristic value unit i fsm forward surge current (1) 1. sinusoidal pulse of 10 ms duration 400 a v rrm repetitive peak reverse voltage (2) 2. pulsed, duration 5 ms, f = 50 hz 200 v i o average output rect ified current (50% duty cycle): (3) 3. for t case > +99 c, derate linearly to 0 a at +150c. 40 a i f(rms) forward rms current 60 a t op operating case temperature range (4) 4. for devices with hot solder dip l ead finish all testing performed at t amb > +125 c are carried out in a 100% inert atmosphere. -55 to +150 c t j junction temperature +150 c t stg storage temperature range (4) -55 to +150 c t sol soldering temperature (5) 5. duration 10 seconds maximum at a distance of not less than 1.5 mm from the device body and the same lead shall not be resoldered until 3 minutes have elapsed. +260 c table 3. thermal resistance symbol parameter value unit r th (j-c) junction to case (1) 1. package mounted on infinite heatsink. 1.0 c/w
BYV54HR characteristics doc id 17416 rev 1 3/8 s to evaluate the conduction losses use the following equation: p = 0.74 x i f(av) + 1.00 x i f 2 (rms ) table 4. electrical measurements at ambiant temperature (per diode), t amb = 22 3 c symbol characteristic mil-std-750 test method test conditions (1) limits units min. max. i r reverse current 4016 dc method, v r = 200 v - 50 a v f1 (2) forward voltage 4011 pulse method, i f = 20 a - 0.95 v v f2 (2) pulse method, i f = 30 a - 1.1 v v br breakdown voltage 4021 i r = 100 a 200 - v c capacitance 4001 v r = 10 v, f = 1 mhz - 400 pf t rr reverse recovery time 4031 i f = 1 a, v r = 30 v, di f /dt = -50 a/s -60ns z th(j-c) (3) relative thermal impedance, junction to case 3101 i h = 15 to 40 a, t h = 50 ms i m = 50 ma, t md = 100 s calculate v f (4) c/w 1. testing performed with both anode terminals 2 and 3 tied ttogehter 2. pulse width 680 s, duty cycle 2% 3. performed only during screening tests parameter drift values (initial measurem ents for htrb), go-no-go. 4. the limits for vf shall be defined by the manufacturer on ever y lot in accordance with mil-std-750 method 3101 and shall guarantee the r th(j-c) limits specified in maximum ratings. table 5. electrical measurements at high and low temperatures (per diode) symbol characteristic mil-std-750 test method test conditions (1) limits units min. max. i r reverse current 4016 t case = +125 (+0, -5) c dc method, v r = 200 v -40ma v f1 (2) forward voltage 4011 t case = +125 (+0, -5) c pulse method, i f = 20 a -0.85v t case = -55 (+0, -5) c pulse method, i f = 20 a -1.15v v f2 (2) t case = +125 (+0, -5) c pulse method, i f = 30 a 1.0 1. read and record measurements shall be performed on a sample of 5 components with 0 failures allowed. alternatively a 100% inspection may be performed. 2. pulse width 680 s, duty cycle 2%
package information BYV54HR 4/8 doc id 17416 rev 1 2 package information in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. figure 2. metal flange mount package (to-254aa (a) ), 3 lead dime nsion definitions a. the terminal identification is specif ied by the device configuration. see figure 1 for terminal connections b a c d e ?f g h ?i j k k l ?m n r1 r2 1 2 3
BYV54HR package information doc id 17416 rev 1 5/8 table 6. metal flange mount package (to-254), 3-lead dimension values reference dimension in millimetres dimlension in inches min. max. min. max. a 13.59 13.84 0.535 0.545 b 13.59 13.84 0.535 0.545 c 20.07 20.32 0.790 0.800 d 6.3 6.7 0.248 0.264 e 1 3.9 0.039 0.154 ?f 3.5 3.9 0.138 0.154 g 16.89 17.4 0.665 0.685 h 6.86 bsc 0.270 bsc ?i (1) 1. 3 locations 0.89 1.14 0.035 0.045 j 3.81 bsc 0.150 bsc k 3.81 bsc 0.150 bsc l 12.95 14.5 0.510 0.571 ?m 3.05 typ. 0.120 typ. n - 0.71 - 0.028 r1 (2) 2. radius of heatsink flange corner - 4 locations - 1 - 0.039 r2 (3) 3. radius of body corner - 4 locations 1.65 typ. 0.065
ordering information BYV54HR 6/8 doc id 17416 rev 1 3 ordering information table 7. ordering information (1) order code escc detailed specification package lead finish comment marking mass eppl packing byv54s200fsy1 - to-254aa gold single die byv54s200fsy1 + beo 10 g - strip pack byv54s200fsyhrb 5103/031/05 solder dip 510303105 + beo y 1. contact st sales office for information about the specif ic conditions for products in die form and qml-q versions.
BYV54HR revision history doc id 17416 rev 1 7/8 4 revision history table 8. document revision history date revision changes 08-jul-2010 1 first issue.
BYV54HR 8/8 doc id 17416 rev 1 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by an authorized st representative, st products are not recommended, authorized or warranted for use in milita ry, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2010 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com


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